Patterned three-color ZnCdSeÕZnCdMgSe quantum-well structures for integrated full-color and white light emitters

We report the growth and characterization of patterned ZnCdSe/ZnCdMgSe quantum-well ~QW! structures grown adjacent to each other on a single InP substrate. Each structure emits at a different wavelength range spanning the visible range. Stripe and square-shaped QW structures of different emission wavelengths, with lateral dimensions between 15 and 60 mm, were deposited sequentially by shadow mask selective area epitaxy ~SAE! steps. Conventional and microphotoluminescence measurements were used to characterize the patterned QWs. They exhibit well-defined excitonic emission in the red, yellow, and green regions of the visible spectrum. This result demonstrates the feasibility of fabricating integrated full-color light emitting diode and laser-based display elements and white light sources using the ZnCdMgSe material system and shadow mask SAE. © 2000 American Institute of Physics. @S0003-6951~00!04149-8#